標題: High Quality Ge Epitaxial Films Grown on In0.51Ga0.49P/GaAs and GaAs Substrates by Ultra High Vacuum Chemical Deposition
作者: Su, Yung-Hsuan
Tang, Shih-Hsuan
Nguyen, Chi Lang
Kuan, Ching-Wen
Yu, Hung-Wei
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
照明與能源光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ge;InGaP;GaAs;Heterostructure;Ultra High Vacuum Chemical Vapor Deposition (UHVCVD)
公開日期: 1-Jan-2014
摘要: The epitaxial growth of high quality Ge thin films on different materials of In0.51Ga0.49P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In0.51Ga0.49P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In0.51Ga0.49P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In0.51Ga0.49P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.
URI: http://hdl.handle.net/11536/125106
ISBN: 978-1-4799-5760-6
ISSN: 
期刊: 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 502
結束頁: 504
Appears in Collections:Conferences Paper