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dc.contributor.authorChang, C. T.en_US
dc.contributor.authorHsu, Y. Y.en_US
dc.contributor.authorLin, K. C.en_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorChien, Yun-Shanen_US
dc.contributor.authorJuan, C. P.en_US
dc.contributor.authorLee, I. C.en_US
dc.contributor.authorYang, P. Y.en_US
dc.contributor.authorCheng, H. C.en_US
dc.date.accessioned2015-07-21T08:31:28Z-
dc.date.available2015-07-21T08:31:28Z-
dc.date.issued2010-01-01en_US
dc.identifier.isbn978-1-56677-807-7en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3334806en_US
dc.identifier.urihttp://hdl.handle.net/11536/125166-
dc.description.abstractThe essay was reported the different electrode materials in a quasi-planar thin film field emission diode by different forming process. The forming process causes an increased surface roughness of emitters or reduced the work function of the emitter and results in a higher field enhancement factor, which shows better field emission characteristics. The turn on voltage could from 15 V to 8 V and 6.5V with Co and Pd electrode at the emission current of 100 nA for samples.en_US
dc.language.isoen_USen_US
dc.titleImproved Field Emission Characteristics with different Electrode Materials by forming process in a Quasi-planar Thin Film Field Emission Diodeen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3334806en_US
dc.identifier.journalSTUDENT POSTERS (GENERAL) - 216TH ECS MEETINGen_US
dc.citation.volume25en_US
dc.citation.issue33en_US
dc.citation.spage175en_US
dc.citation.epage183en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354478100021en_US
dc.citation.woscount0en_US
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