標題: Effect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectrics
作者: Cheng, Yi-Lung
Huang, Jun-Fu
Chang, Wei-Yuan
Chang, Yu-Min
Leu, Jihperng
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2013
摘要: The effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance.
URI: http://dx.doi.org/10.1149/05301.0351ecst
http://hdl.handle.net/11536/125173
ISBN: 978-1-60768-374-2; 978-1-62332-023-2
ISSN: 1938-5862
DOI: 10.1149/05301.0351ecst
期刊: GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5
Volume: 53
起始頁: 351
結束頁: 359
顯示於類別:會議論文