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dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorHuang, Jun-Fuen_US
dc.contributor.authorChang, Wei-Yuanen_US
dc.contributor.authorChang, Yu-Minen_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2015-07-21T08:31:00Z-
dc.date.available2015-07-21T08:31:00Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-60768-374-2; 978-1-62332-023-2en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/05301.0351ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/125173-
dc.description.abstractThe effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance.en_US
dc.language.isoen_USen_US
dc.titleEffect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectricsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05301.0351ecsten_US
dc.identifier.journalGRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5en_US
dc.citation.volume53en_US
dc.citation.spage351en_US
dc.citation.epage359en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000354468000036en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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