標題: | Effect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectrics |
作者: | Cheng, Yi-Lung Huang, Jun-Fu Chang, Wei-Yuan Chang, Yu-Min Leu, Jihperng 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-Jan-2013 |
摘要: | The effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance. |
URI: | http://dx.doi.org/10.1149/05301.0351ecst http://hdl.handle.net/11536/125173 |
ISBN: | 978-1-60768-374-2; 978-1-62332-023-2 |
ISSN: | 1938-5862 |
DOI: | 10.1149/05301.0351ecst |
期刊: | GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 |
Volume: | 53 |
起始頁: | 351 |
結束頁: | 359 |
Appears in Collections: | Conferences Paper |