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dc.contributor.authorBinh-Tinh Tranen_US
dc.contributor.authorMing, Chen-Hauwen_US
dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorChen, Hao-Mingen_US
dc.contributor.authorWang, Ching-Chianen_US
dc.contributor.authorChen, Chien-Chihen_US
dc.contributor.authorHuang, Chih-Yungen_US
dc.contributor.authorChung, Chen-Chenen_US
dc.contributor.authorChang, Edward-Yien_US
dc.date.accessioned2015-07-21T08:31:00Z-
dc.date.available2015-07-21T08:31:00Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-60768-436-7en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/05048.0001ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/125175-
dc.description.abstractIn this study, the growth of GaN-films-based light emitting diodes (LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and 19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.en_US
dc.language.isoen_USen_US
dc.titleGrowth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05048.0001ecsten_US
dc.identifier.journalSTUDENT POSTERS (GENERAL) - 222ND ECS MEETING/PRIME 2012en_US
dc.citation.volume50en_US
dc.citation.issue48en_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.identifier.wosnumberWOS:000354481500001en_US
dc.citation.woscount0en_US
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