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dc.contributor.authorChang, TSen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TSen_US
dc.contributor.authorYeh, FSen_US
dc.date.accessioned2014-12-08T15:17:12Z-
dc.date.available2014-12-08T15:17:12Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.068en_US
dc.identifier.urihttp://hdl.handle.net/11536/12547-
dc.description.abstractIn this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectTFTen_US
dc.subjectlow-ken_US
dc.subjectpassivationen_US
dc.titleIntegration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2005.07.068en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume498en_US
dc.citation.issue1-2en_US
dc.citation.spage70en_US
dc.citation.epage74en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000235270500014-
Appears in Collections:Conferences Paper


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