Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs

doi:10.1016/j.tsf.2005.07.068

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, TS	en_US
dc.contributor.author	Chang, TC	en_US
dc.contributor.author	Liu, PT	en_US
dc.contributor.author	Chang, TS	en_US
dc.contributor.author	Yeh, FS	en_US
dc.date.accessioned	2014-12-08T15:17:12Z	-
dc.date.available	2014-12-08T15:17:12Z	-
dc.date.issued	2006-03-01	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2005.07.068	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12547	-
dc.description.abstract	In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.	en_US
dc.language.iso	en_US	en_US
dc.subject	TFT	en_US
dc.subject	low-k	en_US
dc.subject	passivation	en_US
dc.title	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.tsf.2005.07.068	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	498	en_US
dc.citation.issue	1-2	en_US
dc.citation.spage	70	en_US
dc.citation.epage	74	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000235270500014	-
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