標題: Evolution of two-dimensional structure phase transitions (3 x 1) -> (2 x 1) and (1 x 1) -> (2 x 1) on hydrogen-terminated Si(100) surface
作者: Ferng, SS
Lin, CT
Yang, KM
Hsieh, MF
Lin, DS
物理研究所
Institute of Physics
關鍵字: STM;silicon;hydrogen;desorption;phase transition
公開日期: 1-Mar-2006
摘要: On the Si(100) surface, monohydride dimers (H-Si-Si-H or M-M) and dihydride (H-Si-H or D) species can form an ordered mixture with (3 x 1), (1 x 1) and (2 x 1) phases. Thermal annealing at elevated temperatures causes both the (3 x 1) and (1 x 1) domains to transform to the (2 x 1) monohydride phase. We utilize scanning tunneling microscopy to observe these two-dimensional structure phase transitions on the atomic scale. The results show that the coverage of the (3 x 1) and (1 x 1) domains decays linearly with a common half-life time of similar to 9.8 It at 570 K. In good agreement with a previous report, this finding suggests that the two different transitions are governed by the same reaction mechanism, i.e., the dihydride-pair recombination mechanism.
URI: http://dx.doi.org/10.1143/JJAP.45.2197
http://hdl.handle.net/11536/12550
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.2197
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 3B
起始頁: 2197
結束頁: 2199
Appears in Collections:Conferences Paper


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