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dc.contributor.authorLee, YJen_US
dc.contributor.authorHo, PTen_US
dc.contributor.authorYang, WLen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:17:19Z-
dc.date.available2014-12-08T15:17:19Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.1520en_US
dc.identifier.urihttp://hdl.handle.net/11536/12591-
dc.description.abstractIn this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric oil Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect clue to the two-dimensional strain effect.en_US
dc.language.isoen_USen_US
dc.subjectorientationen_US
dc.subjectultra thinen_US
dc.subjectSi(111)en_US
dc.subjectSi(100)en_US
dc.subjectnitrogenen_US
dc.subjectgeometry effectsen_US
dc.titleCrystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.1520en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue3Aen_US
dc.citation.spage1520en_US
dc.citation.epage1524en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236191900010-
dc.citation.woscount0-
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