應用於通用串列匯流排電力傳輸並具有動態靴帶式電壓技術之高效率降壓型電源轉換器

Abstract

此論文提出應用於通用串列匯流排動態靴帶式電壓技術以維持高效率於大負載變化。動態靴帶式電壓技術應用於系統級晶圓之電源功率管理可以減少50%的矽晶圓面積相較於傳統的P型上橋功率金屬氧化物半導體場效電晶體。此論文之晶片實現於0.25微米製程並達成最高92%之效率於負載變化從1毫安培至1安培。88%效率值於最大驅動電流高於三安培。相較於未加入動態靴帶式電壓技術，最高效率優化值達到28%。

The dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over a wide load range for high power universal serial bus (USB) devices. Silicon area of embedded power management (PM) with the DBV technique in system-on-a-chip (Soc) can be effectively reduced to 50% of conventional design with P-type high-side power MOSFET. Test chip fabricated in 0.25μm CMOSFET process shows 92% peak efficiency from 1mA to 1A. Maximum driving current is higher than 3A with 88 % efficiency. Compared to that without the DBV technique, the efficiency is improved about 28%.