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dc.contributor.authorTu, CHen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorYang, THen_US
dc.contributor.authorZan, HWen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:17:21Z-
dc.date.available2014-12-08T15:17:21Z-
dc.date.issued2006-02-24en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2005.07.026en_US
dc.identifier.urihttp://hdl.handle.net/11536/12614-
dc.description.abstractPoly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 degrees C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform rain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectUHVCVDen_US
dc.subjectpolycrystallineen_US
dc.subjectgermaniumen_US
dc.titleA novel method for growing polycrystalline Ge layer by using UHVCVDen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.surfcoat.2005.07.026en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume200en_US
dc.citation.issue10en_US
dc.citation.spage3261en_US
dc.citation.epage3264en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000235427000033-
Appears in Collections:Conferences Paper


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