完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTu, YHen_US
dc.contributor.authorKwei, CMen_US
dc.contributor.authorTung, CJen_US
dc.date.accessioned2014-12-08T15:17:22Z-
dc.date.available2014-12-08T15:17:22Z-
dc.date.issued2006-02-15en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.susc.2005.12.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/12621-
dc.description.abstractA theory was developed to deal with inelastic interactions for an electron moving parallel to the axis of a cylindrical structure. Formulas for the differential inverse inelastic mean free path (DIIMFP) and the total inverse inelastic mean free path (IIMFP) were derived using dielectric response theory. A sum-rule-constrained extended Drude dielectric function with spatial dispersion was applied to calculate DIIMFPs and IIMFPs for a solid wire and a cavity in solid. The calculated results showed that surface excitations occurred as the electron moved near the boundary either inside or outside the solid, whereas volume excitations arose only for electron moving inside the solid. It was found that the probability for surface excitations increases and that for volume excitations decreases for an electron moving close to the surface. Near the surface, the decrease in volume excitations is compensated by the increase in surface excitations. For a cavity in solid, the IIMFP inside the solid can be approximated by a constant value equal to the IIMFP for the infinite solid, except in the immediate vicinity of the cavity boundary. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectelectronen_US
dc.subjectcylindrical wireen_US
dc.subjectcylindrical cavityen_US
dc.subjectsurface excitationen_US
dc.subjectvolume excitationen_US
dc.titleInelastic interactions of electrons with cylindrical interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.susc.2005.12.005en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume600en_US
dc.citation.issue4en_US
dc.citation.spage820en_US
dc.citation.epage824en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000235723500010-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000235723500010.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。