標題: Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
作者: Liao, YY
Chen, YN
Chuu, DS
Brandes, T
電子物理學系
Department of Electrophysics
公開日期: 1-二月-2006
摘要: The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulklike systems is obtained by varying the width of the slab.
URI: http://dx.doi.org/10.1103/PhysRevB.73.085310
http://hdl.handle.net/11536/12643
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.73.085310
期刊: PHYSICAL REVIEW B
Volume: 73
Issue: 8
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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