完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Guo, JC | en_US |
dc.contributor.author | Lin, YM | en_US |
dc.date.accessioned | 2014-12-08T15:17:27Z | - |
dc.date.available | 2014-12-08T15:17:27Z | - |
dc.date.issued | 2006-02-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2005.862699 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12652 | - |
dc.description.abstract | A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads' parasitics; from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 run. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin,, (minimum noise figure), R, (noise resistance), Re(Y-sopt), and Im(Y-sopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attributed to the advancement of f(T) to 100-GHz level and the effectively reduced gate resistance by multifinger structure. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | de-embedding | en_US |
dc.subject | noise | en_US |
dc.subject | pad | en_US |
dc.subject | RF CMOS | en_US |
dc.subject | substrate | en_US |
dc.title | A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2005.862699 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 53 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 339 | en_US |
dc.citation.epage | 347 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000234850600021 | - |
dc.citation.woscount | 20 | - |
顯示於類別: | 期刊論文 |