氧化鋯金屬橋接電阻式記憶體轉態特性優化之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	江法伸	en_US
dc.contributor.author	Jiang, Fa-Shen	en_US
dc.contributor.author	曾俊元	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2015-11-26T00:56:41Z	-
dc.date.available	2015-11-26T00:56:41Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070250159	en_US
dc.identifier.uri	http://hdl.handle.net/11536/126618	-
dc.language.iso	en_US	en_US
dc.subject	電阻式記憶體	zh_TW
dc.subject	氧化鋯	zh_TW
dc.subject	銅	zh_TW
dc.subject	熱傳導係數	zh_TW
dc.subject	Resistive random access memory	en_US
dc.subject	ZrO2	en_US
dc.subject	Copper	en_US
dc.subject	Thermal conductivity	en_US
dc.title	氧化鋯金屬橋接電阻式記憶體轉態特性優化之研究	zh_TW
dc.title	Investigation and Optimization of Switching Characteristics in ZrO2-base Conductive Bridge Resistive Random Access Memory	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
顯示於類別：	畢業論文