標題: Memory effect on the inelastic interaction of electrons moving parallel to a solid surface
作者: Kwei, CM
Hsu, YH
Tu, YH
Tung, CJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: memory effect;inelastic interaction;surface excitation
公開日期: 1-二月-2006
摘要: It is generally assumed that two successive inelastic interactions between an electron and a solid are independent of each other. In other words, the electron has no memory of its previous interaction. However, the previous interaction of the electron generates a potential that should influence its succeeding inelastic interaction. The aim of this work is to establish a model to account for the memory effect of an electron between two successive inelastic interactions. On the basis of the dielectric response theory, formulae for differential inverse inelastic mean free paths (DIIMFPs) and inelastic mean free paths (IMFPs) considering the memory effect were derived for electrons moving parallel to a solid surface by solving the Poisson equation and applying suitable boundary conditions. These mean free paths were then calculated with the extended Drude dielectric function for a Cu surface. It was found that the DIIMFP and the IMFP with the memory effect for electron energy E lay between the corresponding values without the memory effect for electron energy E and previous energy Eo. The memory effect increased with increasing electron energy loss, E-0 - E-1 in the previous inelastic interaction. Copyright (c) 2005 John Wiley & Sons, Ltd.
URI: http://dx.doi.org/10.1002/sia.2208
http://hdl.handle.net/11536/12665
ISSN: 0142-2421
DOI: 10.1002/sia.2208
期刊: SURFACE AND INTERFACE ANALYSIS
Volume: 38
Issue: 2
起始頁: 84
結束頁: 87
顯示於類別:期刊論文


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