標題: Memory effect on energy losses of charged particles moving parallel to solid surface
作者: Kwei, CM
Tu, YH
Hsu, YH
Tung, CJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: memory effect;surface excitation;inelastic interaction
公開日期: 1-二月-2006
摘要: Theoretical derivations were made for the induced potential and the stopping power of a charged particle moving close and parallel to the surface of a solid. It was illustrated that the induced potential produced by the interaction of particle and solid depended not only on the velocity but also on the previous velocity of the particle before its last inelastic interaction. Another words, the particle kept a memory on its previous velocity, v(0), in determining the stopping power for the particle of velocity v. Based on the dielectric response theory, formulas were derived for the induced potential and the stopping power with memory effect. An extended Drude dielectric function with spatial dispersion was used in the application of these formulas for a proton moving parallel to Si surface. It was found that the induced potential with memory effect lay between induced potentials without memory effect for constant velocities v(0) and v. The memory effect was manifest as the proton changes its velocity in the previous inelastic interaction. This memory effect also reduced the stopping power of the proton. The formulas derived in the present work can be applied to any solid surface and charged particle moving with arbitrary parallel trajectory either inside or outside the solid. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2005.08.186
http://hdl.handle.net/11536/12671
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.08.186
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 243
Issue: 2
起始頁: 293
結束頁: 298
顯示於類別:期刊論文


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