標題: Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature
作者: Chang, KM
Tsai, JY
Li, CH
Yeh, TH
Wang, SW
Yang, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-1996
摘要: The effects on the electrical properties of electron-cyclotron-resonance (ECR) nitride films grown at room temperature with different SiH4/N-2 gas ratios from 7 sccm/43 seem to 2 sccm/48 seem are systematically investigated. Superior properties of the films with low bulk trap density 8X10(17) cm(-3), small trap cross section, high breakdown strength 12.12 MV/cm, and near-stoichiometric refractive index 2.0 are obtained when the gas ratio SiH4/N-2 is 5 sccm/45 sccm, the microwave power is 210 W, and the chamber pressure is 0.5 mTorr. With the microwave power, total gas flow rate, and total pressure unchanged, the decrease in SiH4/N-2 ratio lower than 5/45 results in larger trap density and some lower breakdown strength. On the other side, increasing SiH4/N-2 ratio results in higher hydrogen content, lower breakdown strength, and films which are easily degraded during consecutive voltage sweep. High microwave power will eliminate the weak bonds and strengthen the electrical stability of the high SiH4/N-2 ratio film. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/1267
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 79
Issue: 11
起始頁: 8503
結束頁: 8506
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