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標題: 使用次世代基板製作高效率LED之研究
The Highly Efficient InGaN-Based Light Emitting Devices Grown On Next Generation Substrates
作者: 蔡明達
Tsai,Ming Ta
李威儀
Lee , Wei-I
電子物理系所
關鍵字: 氮化鎵;基板;發光二極體;紫外光;同質磊晶;獨立式氮化鎵基板;GaN;Substrates;LED;UVLED;homoepitaxtial;free-standing GaN substrate
公開日期: 2015
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070182007
http://hdl.handle.net/11536/126991
Appears in Collections:Thesis


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