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dc.contributor.authorChang, YAen_US
dc.contributor.authorChu, JTen_US
dc.contributor.authorKo, CTen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorLin, CFen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:17:32Z-
dc.date.available2014-12-08T15:17:32Z-
dc.date.issued2006-01-25en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2005.10.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/12716-
dc.description.abstractIn0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmetalorganic chemical vapor depositionen_US
dc.subjectInGaAs : Sben_US
dc.subjectsemiconductoren_US
dc.subjectlaser diodesen_US
dc.subjectoptical fiber devicesen_US
dc.subjectVCSELsen_US
dc.titleMOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laseren_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2005.10.030en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume287en_US
dc.citation.issue2en_US
dc.citation.spage550en_US
dc.citation.epage553en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000235071600074-
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