利用氮化鋁鈍化層與遠端電漿表面處理於銦化砷鎵金氧半場效電晶體之電性與可靠度分析

Abstract

本篇研究是文獻中第一次使用遠端電漿表面處理與氮化鋁覆蓋層技術製作銦化砷鎵金氧半場效電晶體進行可靠度分析與其量測，為了瞭解遠端電漿增強型表面處理與氧化氮覆蓋層技術在元件上之可靠度分析與其電荷陷阱之數量，利用分離電容與遲滯效應量測元件來間接證明此技術對於元件其電性上之提升原因;論文第二部分將介紹電荷汲引技術與低頻雜訊量測，利用電荷陷阱之複合電流，可精確計算出二氧化鉿元件上其表面電荷陷阱密度降至4x1011cm-2eV-1，亦可改變輸入之閘極脈衝波之頻率，進一步了解閘極介電層不同深度之電荷陷阱分布情形,根據計算二氧化鉿元件可以降低較深陷阱密度至2.7x1018cm-3。本文亦探討正偏壓應力(PBTI)對於使用此技術之元件之改善,結合以上討論可以證明使用氮化鋁覆蓋層與遠端電漿表面處理可以有效改善三五族場效電晶體之元件電性。

For the first time the reliability of InGaAs MOSFETs with AlN passivation interfacial layer and post remoted plasma treatment has been demonstrated. The multi-frequency C-V measurement and hysteresis method are utilized evaluate the passivation of oxide traps. In addition to that, charge pumping method and low frequency noise technology are applied. Measuring the recombination current between oxide trap charges and substrate charges, the extraction of HfO2 -MOSFETs interface trap density can reduce to 4x1011cm-2eV-1, in conjunction with tuning the input frequency to qualify deep dielectric defect states, he quality of the oxide trap of device was confirmed as Nbt¬=2.7x1018cm-3.Moreover, the effect of positive bias temperature instability stress on PEALD passivated In0.53Ga0.47As MOSFET has also been carried out. Finally, with this experiment discussion, in-situ PEALD method, including AlN interfacial passivation layer and post remote plasma gas, is proved as an effective way in order to improve the electrical properties of III-V based MOS devices.