標題: | Interfacial Reaction Between Eutectic Sn-Pb Solder and Electroplated-Ni as well as Electroless-Ni Metallization During Reflow |
作者: | Chen, Hsiao-Yun Chen, Chih 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Flip-chip solder joints;electronic packaging;electroplated Ni |
公開日期: | 1-Feb-2009 |
摘要: | Electroplated-Ni (EP-Ni) has been adopted gradually as an underbump metallization layer due to its comparatively lower resistivity and higher deposition rate. In this study, the metallurgical reaction between eutectic Sn-Pb solder and EP-Ni as well as electroless-Ni (EL-Ni) was investigated at 200A degrees C, 210A degrees C, 220A degrees C, and 240A degrees C. It is found that the growth rate of Ni(3)Sn(4) intermetallic compound (IMC) on EP-Ni was slower than that on EL-Ni. The consumption rate is measured to be 0.97 x 10(-3) mu m/s and 1.48 x 10(-3) mu m/s for EP-Ni and EL-Ni, respectively. The activation energy is determined to be 51 kJ/mol and 48 kJ/mol for EP-Ni and EL-Ni, respectively. The dense structure of EP-Ni may be responsible for the lower IMC formation rate. |
URI: | http://dx.doi.org/10.1007/s11664-008-0580-7 http://hdl.handle.net/11536/12756 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-008-0580-7 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 38 |
Issue: | 2 |
起始頁: | 338 |
結束頁: | 344 |
Appears in Collections: | Conferences Paper |
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