標題: Interfacial Reaction Between Eutectic Sn-Pb Solder and Electroplated-Ni as well as Electroless-Ni Metallization During Reflow
作者: Chen, Hsiao-Yun
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Flip-chip solder joints;electronic packaging;electroplated Ni
公開日期: 1-Feb-2009
摘要: Electroplated-Ni (EP-Ni) has been adopted gradually as an underbump metallization layer due to its comparatively lower resistivity and higher deposition rate. In this study, the metallurgical reaction between eutectic Sn-Pb solder and EP-Ni as well as electroless-Ni (EL-Ni) was investigated at 200A degrees C, 210A degrees C, 220A degrees C, and 240A degrees C. It is found that the growth rate of Ni(3)Sn(4) intermetallic compound (IMC) on EP-Ni was slower than that on EL-Ni. The consumption rate is measured to be 0.97 x 10(-3) mu m/s and 1.48 x 10(-3) mu m/s for EP-Ni and EL-Ni, respectively. The activation energy is determined to be 51 kJ/mol and 48 kJ/mol for EP-Ni and EL-Ni, respectively. The dense structure of EP-Ni may be responsible for the lower IMC formation rate.
URI: http://dx.doi.org/10.1007/s11664-008-0580-7
http://hdl.handle.net/11536/12756
ISSN: 0361-5235
DOI: 10.1007/s11664-008-0580-7
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 38
Issue: 2
起始頁: 338
結束頁: 344
Appears in Collections:Conferences Paper


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