完整後設資料紀錄
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dc.contributor.authorChen, Hsiao-Yunen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:17:35Z-
dc.date.available2014-12-08T15:17:35Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-008-0580-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/12756-
dc.description.abstractElectroplated-Ni (EP-Ni) has been adopted gradually as an underbump metallization layer due to its comparatively lower resistivity and higher deposition rate. In this study, the metallurgical reaction between eutectic Sn-Pb solder and EP-Ni as well as electroless-Ni (EL-Ni) was investigated at 200A degrees C, 210A degrees C, 220A degrees C, and 240A degrees C. It is found that the growth rate of Ni(3)Sn(4) intermetallic compound (IMC) on EP-Ni was slower than that on EL-Ni. The consumption rate is measured to be 0.97 x 10(-3) mu m/s and 1.48 x 10(-3) mu m/s for EP-Ni and EL-Ni, respectively. The activation energy is determined to be 51 kJ/mol and 48 kJ/mol for EP-Ni and EL-Ni, respectively. The dense structure of EP-Ni may be responsible for the lower IMC formation rate.en_US
dc.language.isoen_USen_US
dc.subjectFlip-chip solder jointsen_US
dc.subjectelectronic packagingen_US
dc.subjectelectroplated Nien_US
dc.titleInterfacial Reaction Between Eutectic Sn-Pb Solder and Electroplated-Ni as well as Electroless-Ni Metallization During Reflowen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/s11664-008-0580-7en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume38en_US
dc.citation.issue2en_US
dc.citation.spage338en_US
dc.citation.epage344en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000262482200016-
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