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dc.contributor.author吳彥模en_US
dc.contributor.authorWu, Yen-Moen_US
dc.contributor.author盧廷昌en_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2015-11-26T01:02:47Z-
dc.date.available2015-11-26T01:02:47Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070350508en_US
dc.identifier.urihttp://hdl.handle.net/11536/127650-
dc.description.abstract奈米雷射具有小尺寸、低耗能的優勢,可以被應用在半導體製程、高密度儲存、生物與生醫領域,吸引了非常多團隊研究,本論文主要探討表面電漿雷射在鋁基板下的雷射特性,在研究中鋁薄膜以及絕緣層有不同的製程方式,造成薄膜品質與表面形貌有所不同,經光學量測結果搭配原子力顯微鏡以及反射頻譜分析,發現表面形貌的不平整會對電漿模態造成散射使得閾值大幅上升,經過適當製成方法的選擇可以增進雷射的表現,並在室溫下依然可以達到雷射操作,另外藉著理論模擬的預測成功實現了不具絕緣層的表面電漿雷射,文中最後將鋁基板的奈米雷射與銀基板的奈米雷射進行特性上比較。zh_TW
dc.description.abstractNanolasers with the advantages of small size and low energy consumption can be applied to many areas, like semiconductor fabrication, high density optical storage, biological and biomedical area. Nanolasers appeal many advanced groups to research. In this thesis, we mainly investigate the aluminum-based surface plasmon polariton ZnO nanowire lasers. In our research, the aluminum film and insulator are respectively fabricated in different ways. After analyzing the optical measurement results with AFM and reflectivity spectrum, we find that the threshold power density would greatly increase due to scattering loss resulting from the different fabrication method. Choosing the appropriate ways to fabricate can improve the laser device performance. As a result, the device still can operate at room temperature. By the prediction of simulation results, we successfully demonstrate the surface plasmonic laser without insulator layer. In the last section, we compare the difference between aluminum-based nanolasers and silver-based nanolasers.en_US
dc.language.isoen_USen_US
dc.subject奈米雷射zh_TW
dc.subject表面電漿zh_TW
dc.subject氧化鋅zh_TW
dc.subject鋁薄膜zh_TW
dc.subjectnanolaseren_US
dc.subjectsurface plamonen_US
dc.subjectZnOen_US
dc.subjectaluminum filmen_US
dc.title氧化鋅表面電漿奈米雷射之研究zh_TW
dc.titleStudy of surface plasmon polariton ZnO nanowire lasersen_US
dc.typeThesisen_US
dc.contributor.department光電工程研究所zh_TW
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