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dc.contributor.author莊雅琪en_US
dc.contributor.authorChuang, Ya-Chien_US
dc.contributor.author張立en_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2015-11-26T01:02:51Z-
dc.date.available2015-11-26T01:02:51Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070251541en_US
dc.identifier.urihttp://hdl.handle.net/11536/127701-
dc.language.isozh_TWen_US
dc.subject氮化鈦zh_TW
dc.subject二氧化鈦zh_TW
dc.subject矽zh_TW
dc.subject鑽石zh_TW
dc.subject偏壓輔助成核法zh_TW
dc.subject氮化法zh_TW
dc.subjectTitanium dioxideen_US
dc.subjectTitanium nitrideen_US
dc.subjectplasma nitridationen_US
dc.subjectbias enhanced nucleationen_US
dc.subjectatomic layer depositionen_US
dc.subjectsiliconen_US
dc.title(100)Si基板上之TiO2薄膜氮化為TiN磊晶並作為緩衝層在其上成長鑽石薄膜之研究zh_TW
dc.titleThe study of diamond growth on Si substrate using an epitaxial TiN buffer layer formed by plasma nitriding of TiO2 filmen_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系所zh_TW
Appears in Collections:Thesis


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