標題: | Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition |
作者: | Chen, Wei-Chun Wang, Wei-Lin Tiwari, Rajanish N. Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Diamond film;Nitrides;Chemical vapor deposition;Interface characterization;Morphology |
公開日期: | 1-二月-2009 |
摘要: | Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V. |
URI: | http://dx.doi.org/10.1016/j.diamond.2008.10.018 http://hdl.handle.net/11536/12878 |
ISSN: | 0925-9635 |
DOI: | 10.1016/j.diamond.2008.10.018 |
期刊: | DIAMOND AND RELATED MATERIALS |
Volume: | 18 |
Issue: | 2-3 |
起始頁: | 124 |
結束頁: | 127 |
顯示於類別: | 會議論文 |