(100)Si基板上之TiO2薄膜氮化為TiN磊晶並作為緩衝層在其上成長鑽石薄膜之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	莊雅琪	en_US
dc.contributor.author	Chuang, Ya-Chi	en_US
dc.contributor.author	張立	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2015-11-26T01:02:51Z	-
dc.date.available	2015-11-26T01:02:51Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070251541	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127701	-
dc.language.iso	zh_TW	en_US
dc.subject	氮化鈦	zh_TW
dc.subject	二氧化鈦	zh_TW
dc.subject	矽	zh_TW
dc.subject	鑽石	zh_TW
dc.subject	偏壓輔助成核法	zh_TW
dc.subject	氮化法	zh_TW
dc.subject	Titanium dioxide	en_US
dc.subject	Titanium nitride	en_US
dc.subject	plasma nitridation	en_US
dc.subject	bias enhanced nucleation	en_US
dc.subject	atomic layer deposition	en_US
dc.subject	silicon	en_US
dc.title	(100)Si基板上之TiO2薄膜氮化為TiN磊晶並作為緩衝層在其上成長鑽石薄膜之研究	zh_TW
dc.title	The study of diamond growth on Si substrate using an epitaxial TiN buffer layer formed by plasma nitriding of TiO2 film	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系所	zh_TW
顯示於類別：	畢業論文