標題: Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature
作者: Lin, Meng-Yu
Wang, Cheng-Hung
Pao, Chun-Wei
Lin, Shih-Yen
顯示科技研究所
Institute of Display
關鍵字: Molecular beans epitaxy;Semiconducting materials
公開日期: 1-Sep-2015
摘要: Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600 degrees C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.039
http://hdl.handle.net/11536/127833
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2015.02.039
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 425
起始頁: 177
結束頁: 180
Appears in Collections:Articles