標題: Physical properties of InGaO3(ZnO)(m) with various content ratio grown by PAMBE
作者: Yang, Chu Shou
Huang, Shin Jung
Kao, Yu Chung
Chen, Guan He
Chou, Wu-Ching
電子物理學系
Department of Electrophysics
關鍵字: A3. Molecular beam epitaxy;IGZO
公開日期: 1-Sep-2015
摘要: The quaternary compound semiconductor (InGaO3(ZnO)(m)); m=1,2,3...)(IGZO) thin films were fabricated by plasma-assisted molecular beam epitaxy. First, the IGZO thin films were grown under the variation of gallium cell temperature to evaluate the fundamental properties of IGZO. A phase transformation between crystalline and amorphous is observed when the gallium content ratio is higher than 28 at%. It revealed redundancy in the metal, which would self-assist the channel or detect state to destroy the crystal structure. The highest mobility of 74.3 cm(2)/V s was obtained at 28 at% of gallium. By tuning the element content of quaternary compounds, the ternary plots distribution of IGZO thin films exhibits an amorphous structure in most regions. Therefore, the stoichiometric condition of IGZO, which is 1:1:1:4, is demonstrated at the amorphous structure. Additionally, it transitions to crystalline structure after a 1100 degrees C annealing process. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.054
http://hdl.handle.net/11536/127835
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2015.02.054
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 425
起始頁: 258
結束頁: 261
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