GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

doi:10.1016/j.jcrysgro.2015.03.053

標題:	GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy
作者:	Chen, Hsuan-An Shih, Tung-Chuan Tang, Shiang-Feng Weng, Ping-Kuo Gau, Yau-Tang Lin, Shih-Yen 光電工程學系 Department of Photonics
關鍵字:	Nanostructures;Molecular beam epitaxy
公開日期:	1-九月-2015
摘要:	GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2015.03.053 http://hdl.handle.net/11536/127836
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2015.03.053
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	425
起始頁:	283
結束頁:	286
顯示於類別：	期刊論文