完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Hsiang | en_US |
dc.contributor.author | Chu, Li-Chen | en_US |
dc.contributor.author | Lee, Ming Ling | en_US |
dc.contributor.author | Kang, Nai Chung | en_US |
dc.contributor.author | Shei, Shih-Chang | en_US |
dc.contributor.author | Chang, Hung Wei | en_US |
dc.contributor.author | Chu, Yu Cheng | en_US |
dc.contributor.author | Shen, Huan Yu | en_US |
dc.contributor.author | Chen, Chin Pang | en_US |
dc.contributor.author | Chang, Kow Ming | en_US |
dc.date.accessioned | 2015-12-02T02:59:06Z | - |
dc.date.available | 2015-12-02T02:59:06Z | - |
dc.date.issued | 2015-08-01 | en_US |
dc.identifier.issn | 0042-207X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.vacuum.2014.11.004 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/127851 | - |
dc.description.abstract | GaP-based light emitting diodes (LEDs) reliability tests are crucial to further development for high-performance LED lighting technology. In this study, we perform reverse-bias stress tests for LEDs in water vapor and salty water vapor ambient, respectively. The results indicate that salty water vapor can quickly degrade LEDs. To investigate the failure mechanisms, electrical measurements, forward-bias and reverse-bias electroluminescence images, and multiple material analyses have been taken to study the failure mechanism. Results indicate that NaCl clustering solids and atom diffusion may cause deformation of the electrode and enhance the degradation of the LEDs. (c) 2014 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlGaInP LED | en_US |
dc.subject | Salty water vapor | en_US |
dc.subject | Reverse-bias | en_US |
dc.subject | NaCl clustering solids | en_US |
dc.subject | Atom diffusion | en_US |
dc.title | Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vapor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.vacuum.2014.11.004 | en_US |
dc.identifier.journal | VACUUM | en_US |
dc.citation.volume | 118 | en_US |
dc.citation.spage | 13 | en_US |
dc.citation.epage | 16 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000356190500004 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |