標題: | A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer |
作者: | Shrestha, Niraj Man Wang, Yuen Yee Li, Yiming Chang, Edward Yi 材料科學與工程學系 資訊工程學系 Department of Materials Science and Engineering Department of Computer Science |
關鍵字: | Vertical HEMT;Current blocking layer;Parallel multiple apertures;Vertical leakage;Breakdown voltage;AlGaN/GaN;Silicon oxide;Device simulation |
公開日期: | 1-八月-2015 |
摘要: | In this work, a new AlGaN/GaN vertical high electron mobility transistor (HEMT) with silicon oxide (SiO2) current blocking layer (CBL) is designed and studied numerically for high-power devices. To overcome the excessive vertical leakage through CBL layer in conventional p-GaN CBL vertical HEMT, large band-gap material, SiO2 is, for the first time, introduced as a CBL material. The band-gap of SiO2 leads to a large barrier which can effectively suppress the vertical leakage even at high drain bias and enhance the breakdown voltage to 1270 V (154% enhancement compared with the conventional p-GaN CBL vertical HEMT). In addition, a device with four parallel apertures is proposed to reduce the aperture resistance, where the total aperture thickness is equal to the aperture thickness of the conventional one. Therefore, the drain current is increased. We not only focus on the vertical leakage control, but also, on the drain current boost (7% improvement). (c) 2014 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.vacuum.2014.11.022 http://hdl.handle.net/11536/127853 |
ISSN: | 0042-207X |
DOI: | 10.1016/j.vacuum.2014.11.022 |
期刊: | VACUUM |
Volume: | 118 |
起始頁: | 59 |
結束頁: | 63 |
顯示於類別: | 期刊論文 |