標題: | Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layer |
作者: | Shrestha, Niraj Man Li, Yiming Chang, Edward Yi 材料科學與工程學系 資訊工程學系 Department of Materials Science and Engineering Department of Computer Science |
關鍵字: | Vertical high electron mobility transistor;Silicon dioxide current blocking layer;Multiple apertures;Electrical characteristic;Breakdown voltage;Simulation |
公開日期: | 三月-2016 |
摘要: | Gallium nitride (GaN) based vertical high electron mobility transistor (HEMT) is very crucial for high power applications. Combination of advantageous material properties of GaN for high speed applications and novel vertical structure makes this device very beneficial for high power application. To improve the device performance especially in high drain bias condition, a novel GaN based vertical HEMT with silicon dioxide (SiO2) current blocking layer (CBL) was reported recently. In this paper, effects of the thickness of CBL layer and the aperture length on the electrical and breakdown characteristics of GaN vertical HEMTs with SiO2 CBL are simulated by using two-dimensional quantum-mechanically corrected device simulation. Intensive numerical study on the device enables us to optimize and conclude that devices with 0.5-mu m-thick SiO2 layer and 1-mu m-long aperture will be beneficial considerations to improve the device performance. Notably, using the multiple apertures can effectively reduce the on-state conducting resistance of the device. On increasing the number of apertures, the drain current is increased but the breakdown voltage is decreased. Therefore, device with four apertures is taken as an optimized result. The maximum drain current of 84 mA at V-G = 1V and V-D = 30 V, and the breakdown voltage of 480 V have been achieved for the optimized device. |
URI: | http://dx.doi.org/10.1007/s10825-015-0738-5 http://hdl.handle.net/11536/134046 |
ISSN: | 1569-8025 |
DOI: | 10.1007/s10825-015-0738-5 |
期刊: | JOURNAL OF COMPUTATIONAL ELECTRONICS |
Volume: | 15 |
Issue: | 1 |
起始頁: | 154 |
結束頁: | 162 |
顯示於類別: | 期刊論文 |