標題: Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel
作者: Yen, Shiang-Shiou
Hsu, Hsiao-Hsuan
Chiou, Ping
Cheng, Chun-Hu
Tung, Chien-Hung
Lai, Yu-Chien
Li, Hung-Wei
Chang, Chih-Pang
Lu, Hsueh-Hsing
Chuang, Ching-Sang
Lin, Yu-Hsin
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2015
摘要: In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.54.04DF05
http://hdl.handle.net/11536/127937
ISSN: 0021-4922
DOI: 10.7567/JJAP.54.04DF05
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 54
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