標題: Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors
作者: Hsu, Hsiao-Hsuan
Yen, Shiang-Shiou
Chiu, Yu-Chien
Chiou, Ping
Chang, Chun-Yen
Cheng, Chun-Hu
Lai, Yu-Chien
Chang, Chih-Pang
Lu, Hsueh-Hsing
Chuang, Ching-Sang
Lin, Yu-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaZnO;Compound;Crystal;Thin film transistor
公開日期: 15-Sep-2015
摘要: A low off-state current of 1.6 x 10(-14) A/mu m and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 degrees C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2014.12.207
http://hdl.handle.net/11536/127977
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2014.12.207
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 643
起始頁: S187
結束頁: S192
Appears in Collections:Articles