标题: Film-Profile Engineered InGaZnO Thin-Film Transistors With Self-Aligned Bottom Gates
作者: Shie, Bo-Shiuan
Lin, Horng-Chih
Huang, Tiao-Yuan
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Film profile engineering;self-aligned;metal oxide;InGaZnO;thin-film transistor
公开日期: 1-八月-2015
摘要: We propose and demonstrate a method which combines film profile engineering (FPE) and a procedure of forming self-aligned bottom gates (SABGs) to fabricate InGaZnO thin-film transistors (TFTs). In the scheme, an ingenious etching procedure was implemented to form the final bottom gate self-aligned to the upper hardmask structure. The fabricated SABG devices show greatly reduced OFF-state leakage as compared with nonself-aligned ones, attributing to the reduction of gate-to-source/drain overlap areas which lowers both parasitic capacitance and gate leakage current. These merits benefit the operation of circuits consisted of TFTs implemented with FPE.
URI: http://dx.doi.org/10.1109/LED.2015.2442275
http://hdl.handle.net/11536/128002
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2442275
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
起始页: 787
结束页: 789
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