標題: Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
作者: Huang, Wei-Ching
Liu, Kuan-Shin
Wong, Yuen-Yee
Hsieh, Chi-Feng
Chang, Edward-Yi
Hsu, Heng-Tung
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-2015
摘要: The influence of the thickness of a high-temperature AlN (HT-AlN) buffer layer on the properties of an InAlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate was investigated. As revealed by atomic force microscope analysis, a rougher surface and larger grain size were observed with a thicker buffer layer. The larger grains promoted the two-dimensional (2D) growth mode of the GaN layer at the initial growth stage. This suppressed oxygen incorporation at the GaN/HT-AlN interface and thus improved the resistivity of the GaN layer. Moreover, the lower grain density also resulted in enhanced GaN crystal quality of the GaN layer. As a consequence, the electrical properties of the InAlN/GaN HEMT device, such as output current, transconductance and off-state breakdown voltage, were improved by increasing the HT-AlN buffer layer thickness. (C) 2015 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.54.071001
http://hdl.handle.net/11536/128058
ISSN: 0021-4922
DOI: 10.7567/JJAP.54.071001
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 54
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