標題: Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1-xGex nanowire
作者: Lai, Yi-Lung
Chang, Tai-Yuan
Chang, Kow-Ming
Chen, Chu-Feng
Lai, Chiung-Hui
Chen, Yi-Ming
Whang, Allen Jong-Woei
Lai, Hui-Lung
Chen, Huai-Yi
Wang, Shiu-Yu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2015
摘要: Si1-xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1-xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxy-silane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1-xGex nanowire is high and it can be further improved by Si1-xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor. (C) 2015 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.54.06FG12
http://hdl.handle.net/11536/128075
ISSN: 0021-4922
DOI: 10.7567/JJAP.54.06FG12
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 54
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