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dc.contributor.authorLin, T. N.en_US
dc.contributor.authorChih, K. H.en_US
dc.contributor.authorCheng, M. C.en_US
dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorHsu, C. L.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorHou, J. L.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorLin, T. Y.en_US
dc.date.accessioned2019-04-03T06:38:57Z-
dc.date.available2019-04-03T06:38:57Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c5ra09315een_US
dc.identifier.urihttp://hdl.handle.net/11536/128101-
dc.description.abstractA green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of light emission in GaAs epilayers with graphene quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c5ra09315een_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume5en_US
dc.citation.issue75en_US
dc.citation.spage60908en_US
dc.citation.epage60913en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000358229500030en_US
dc.citation.woscount7en_US
Appears in Collections:Articles


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