標題: Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
作者: Lin, T. N.
Inciong, M. R.
Santiago, S. R. M. S.
Yeh, T. W.
Yang, W. Y.
Yuan, C. T.
Shen, J. L.
Kuo, H. C.
Chiu, C. H.
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 18-三月-2016
摘要: We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photoinduced doping are promising for applications in GaN-based optoelectronic devices.
URI: http://dx.doi.org/10.1038/srep23260
http://hdl.handle.net/11536/133467
ISSN: 2045-2322
DOI: 10.1038/srep23260
期刊: SCIENTIFIC REPORTS
Volume: 6
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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