標題: Enhancement of light emission in GaAs epilayers with graphene quantum dots
作者: Lin, T. N.
Chih, K. H.
Cheng, M. C.
Yuan, C. T.
Hsu, C. L.
Shen, J. L.
Hou, J. L.
Wu, C. H.
Chou, W. C.
Lin, T. Y.
電子物理學系
Department of Electrophysics
公開日期: 1-一月-2015
摘要: A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.
URI: http://dx.doi.org/10.1039/c5ra09315e
http://hdl.handle.net/11536/128101
ISSN: 2046-2069
DOI: 10.1039/c5ra09315e
期刊: RSC ADVANCES
Volume: 5
Issue: 75
起始頁: 60908
結束頁: 60913
顯示於類別:期刊論文


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