Enhancement of light emission in GaAs epilayers with graphene quantum dots

doi:10.1039/c5ra09315e

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, T. N.	en_US
dc.contributor.author	Chih, K. H.	en_US
dc.contributor.author	Cheng, M. C.	en_US
dc.contributor.author	Yuan, C. T.	en_US
dc.contributor.author	Hsu, C. L.	en_US
dc.contributor.author	Shen, J. L.	en_US
dc.contributor.author	Hou, J. L.	en_US
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Chou, W. C.	en_US
dc.contributor.author	Lin, T. Y.	en_US
dc.date.accessioned	2019-04-03T06:38:57Z	-
dc.date.available	2019-04-03T06:38:57Z	-
dc.date.issued	2015-01-01	en_US
dc.identifier.issn	2046-2069	en_US
dc.identifier.uri	http://dx.doi.org/10.1039/c5ra09315e	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128101	-
dc.description.abstract	A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhancement of light emission in GaAs epilayers with graphene quantum dots	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1039/c5ra09315e	en_US
dc.identifier.journal	RSC ADVANCES	en_US
dc.citation.volume	5	en_US
dc.citation.issue	75	en_US
dc.citation.spage	60908	en_US
dc.citation.epage	60913	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000358229500030	en_US
dc.citation.woscount	7	en_US
顯示於類別：	期刊論文

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