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dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChen, Chun-Chingen_US
dc.contributor.authorChang, Che-Chiaen_US
dc.date.accessioned2015-12-02T02:59:22Z-
dc.date.available2015-12-02T02:59:22Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0061508sslen_US
dc.identifier.urihttp://hdl.handle.net/11536/128108-
dc.description.abstractResistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10(4) s at 85 degrees C. Electric-pulse-induced resistance switching test up to 10(8) switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications. (C) 2015 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHigh Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0061508sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.spageQ41en_US
dc.citation.epageQ43en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000358058400004en_US
dc.citation.woscount0en_US
顯示於類別：期刊論文


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