標題: | Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/s) and Low-Energy Consumption Operation |
作者: | Chi, Kai-Lun Yen, Jia-Liang Wun, Jhih-Min Jiang, Jia-Wei Lu, I-Cheng Chen, Jason Yang, Ying-Jay Shi, Jin-Wei 光電工程學系 Department of Photonics |
關鍵字: | Semiconductor lasers;vertical cavity surface emitting lasers |
公開日期: | 1-Nov-2015 |
摘要: | The strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 degrees C), as well as lower the required driving current density performance of oxide-relief 850-nm vertical-cavity surface-emitting lasers (VCSELs) for >40 Gbit/s operation. By increasing the wavelength detuning from 15 to 20 nm, a significant improvement in the electrical-to-optical (E-O) bandwidth (20 to 27 GHz) of the VCSEL can be observed. This detuning design (similar to 20 nm) is incorporated along with a Zn-diffusion structure into our oxide-relief VCSEL with a miniaturized oxide-relief aperture (similar to 3 mu m). Highly single-mode, high-speed (26 GHz) operation, and moderate differential resistance (100 Omega) values can be simultaneously achieved. In addition, it is found that devices with a further larger detuning wavelength (>20 nm) and enlarged oxide-relief apertures (similar to 8 mu m) can sustain the same maximum E-O bandwidth (26 GHz) as that of a miniaturized (similar to 3 mu m) VCSEL, resulting in the lower driving current density (8 versus 18.8 kA/cm(2)) required for high-speed performance. Excellent transmission performance, which includes an extremely low energy-to-data rate ratio (EDR: 228 fJ/bit; over 100 m OM4 fiber) and record-low driving-current density (8 kA/cm(2); 3.5 mA) has been successfully achieved for 41 Gbit/s error-free transmission for these VCSELs. |
URI: | http://dx.doi.org/10.1109/JSTQE.2015.2451015 http://hdl.handle.net/11536/128122 |
ISSN: | 1077-260X |
DOI: | 10.1109/JSTQE.2015.2451015 |
期刊: | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS |
Volume: | 21 |
Appears in Collections: | Articles |