標題: Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/s) and Low-Energy Consumption Operation
作者: Chi, Kai-Lun
Yen, Jia-Liang
Wun, Jhih-Min
Jiang, Jia-Wei
Lu, I-Cheng
Chen, Jason
Yang, Ying-Jay
Shi, Jin-Wei
光電工程學系
Department of Photonics
關鍵字: Semiconductor lasers;vertical cavity surface emitting lasers
公開日期: 1-十一月-2015
摘要: The strong (>20 nm) wavelength detuning technique has been demonstrated to enhance the modulation speed and high-temperature characteristics (at 85 degrees C), as well as lower the required driving current density performance of oxide-relief 850-nm vertical-cavity surface-emitting lasers (VCSELs) for >40 Gbit/s operation. By increasing the wavelength detuning from 15 to 20 nm, a significant improvement in the electrical-to-optical (E-O) bandwidth (20 to 27 GHz) of the VCSEL can be observed. This detuning design (similar to 20 nm) is incorporated along with a Zn-diffusion structure into our oxide-relief VCSEL with a miniaturized oxide-relief aperture (similar to 3 mu m). Highly single-mode, high-speed (26 GHz) operation, and moderate differential resistance (100 Omega) values can be simultaneously achieved. In addition, it is found that devices with a further larger detuning wavelength (>20 nm) and enlarged oxide-relief apertures (similar to 8 mu m) can sustain the same maximum E-O bandwidth (26 GHz) as that of a miniaturized (similar to 3 mu m) VCSEL, resulting in the lower driving current density (8 versus 18.8 kA/cm(2)) required for high-speed performance. Excellent transmission performance, which includes an extremely low energy-to-data rate ratio (EDR: 228 fJ/bit; over 100 m OM4 fiber) and record-low driving-current density (8 kA/cm(2); 3.5 mA) has been successfully achieved for 41 Gbit/s error-free transmission for these VCSELs.
URI: http://dx.doi.org/10.1109/JSTQE.2015.2451015
http://hdl.handle.net/11536/128122
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2015.2451015
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 21
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