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dc.contributor.authorHuang, Chien-Shengen_US
dc.contributor.authorYeh, Chun-Yuen_US
dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorHsieh, Yi-Minen_US
dc.contributor.authorKu, Chien-Yehen_US
dc.contributor.authorLai, Quan-Tingen_US
dc.date.accessioned2014-12-08T15:17:39Z-
dc.date.available2014-12-08T15:17:39Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2008.10.058en_US
dc.identifier.urihttp://hdl.handle.net/11536/12812-
dc.description.abstractCNT-ZnO composite materials were successfully grown by thermal chemical vapor deposition (thermal CVD). First, Multiwalled Carbon nanotubes were synthesized in the temperature range of 500-700 degrees C. After coating Au nanoparticles on such grown CNTs, ZnO nanowires were synthesized via Zn evaporation method at 500 degrees C. SEM images showed that these CNT-ZnO composites were spinous, and XRD analyses showed that the spinal ZnO were crystalline. The turn-on field of CNT-ZnO composite materials with 500 degrees C growth temperature of underlying CNTs was 3.72 V/mu m, which was 5.58 V/mu m for CNTs grown at 500 degrees C. It was also found that the higher temperature (<550 degrees C) the underlying CNTs were grown at, the better field emission properties CNT-ZnO composite materials have. The WIG ratio from Raman spectroscopy of CNTs decreased as the growth temperature of CNTs increased. The graphitization of underlying CNTs played an important role in the Field emission of CNT-ZnO composite materials. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCNT-ZnOen_US
dc.subjectComposite materialsen_US
dc.subjectField emission propertiesen_US
dc.titleField emission properties of CNT-ZnO composite materialsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2008.10.058en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume18en_US
dc.citation.issue2-3en_US
dc.citation.spage452en_US
dc.citation.epage456en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264429300080-
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