完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, YC | en_US |
dc.contributor.author | Duh, JG | en_US |
dc.contributor.author | Chiou, BS | en_US |
dc.date.accessioned | 2014-12-08T15:17:40Z | - |
dc.date.available | 2014-12-08T15:17:40Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 0361-5235 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12815 | - |
dc.description.abstract | Nickel plating has been used as the under bump metallurgy (UBM) in the microelectronics industry. In this study, the electroplating process was demonstrated to be a good alternative approach to produce the Ni-P layer as UBM. The wettability of several commercial solder pastes, such as Sn-3.5Ag, Sn-37Pb, and Sn-3Ag-0.5Cu solder, on electroplated Ni-P with various phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was investigated. The role of phosphorus in the wettability was probed. The surface morphology and surface roughness in electroplated Ni-P was observed with the aid of both field emission scanning electron microscope (SEM) and atomic force microscope (AFM). The correlation between wettability and phosphorus contents in electroplated Ni-P was evaluated. As the phosphorous contents increased, the surface morphology of the Ni-P deposit was smoother and surface roughness of Ni-P became smaller. The improvement of surface morphology and surface roughness enhanced the wettability of electroplated Ni-P. The interfacial reaction between lead-free solder and electroplating Ni-P UBM was also investigated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | lead-free solder | en_US |
dc.subject | electroplated Ni-P | en_US |
dc.subject | under bump metallurgy (UBM) | en_US |
dc.subject | wettability | en_US |
dc.subject | interfacial reaction | en_US |
dc.title | Wettability of electroplated Ni-P in under bump metallurgy with Sn-Ag-Cu solder | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 7 | en_US |
dc.citation.epage | 14 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000235053200003 | - |
顯示於類別: | 會議論文 |