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dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorChen, Chu-Fengen_US
dc.contributor.authorKuo, Po-Shenen_US
dc.contributor.authorChang, Tai-Yuanen_US
dc.contributor.authorWhang, Allen Jong-Woeien_US
dc.contributor.authorLai, Yi-Lungen_US
dc.contributor.authorWang, Shiu-Yuen_US
dc.date.accessioned2015-12-02T02:59:25Z-
dc.date.available2015-12-02T02:59:25Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn1536-1241en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNB.2015.2407912en_US
dc.identifier.urihttp://hdl.handle.net/11536/128184-
dc.description.abstractNanowires are extensively used to fabricate highly sensitive electrical sensors for detection of biological and chemical species. The hole mobility can be promoted by the increasing Ge fraction in SiGe, achieved by the oxidation-induced Ge condensation. However, oxidation increases the number of surface states, which brings the nonnegligible contribution in mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent to modify the surface of SiGe nanowires, then bonding to bio-linker, bis (3-sulfo-N-hydroxysuccinimide ester) sodium salt (BS3). Various methods have been proposed for increasing sensitivity of boron-doped SiGe nanowires, such as capping layer, surface treatment, and annealing temperature.en_US
dc.language.isoen_USen_US
dc.subjectBiosensorsen_US
dc.subjectoxidationen_US
dc.subjectsensitivityen_US
dc.subjectSiGe nanowireen_US
dc.subjectsurface stateen_US
dc.subjectsurface treatmenten_US
dc.titleInfluence of Surface State on Biochemical Sensing Using SiGe Nanowireen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNB.2015.2407912en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOBIOSCIENCEen_US
dc.citation.volume14en_US
dc.citation.spage334en_US
dc.citation.epage338en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000359565800001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles