非均質矽鍺奈米線在高靈敏度生物感測器之新穎應用

Abstract

矽奈米線在近年來被廣泛研究，尤其在感測元件的應用上被視為最具潛力的材料之一。本實驗室團隊也成功製做出矽鍺奈米線，並證實矽鍺奈米線同樣具有感測功能，可作為生物感測器之用。在本論文研究中，我們利用半導體製程技術製作n型與p型的矽鍺奈米線與矽奈米線，並比較矽鍺奈米線與矽奈米線元件的感測特性，探討矽鍺奈米線與矽奈米線感測元件之差異。由矽鍺奈米線與矽奈米線比較之結果，我們更進一步提出非均質結構之矽鍺奈米線，利用矽鍺氧化時的鍺析出現象，我們成功製作出非均質結構，並探討此製程技術最重要的溫度因素，最後證實非均質矽鍺奈米線比均質化的奈米線有更高的感測能力。

Si nanowire has attracted a lot of attention and been studied to a great extent. It is considered as one of the most promising candidate for chemical or biological sensing application. In our previous study, we successfully demonstrated the sensing capability of SiGe nanowire-based bio-sensor. In this thesis, p-type and n-type SiGe and Si nanowires were fabricated by sidewall spacer formation, which is compatible to VLSI technology. The changes of electrical characteristics of nanowires corresponding to APTMS and BS3 modification were studied. Then we proposed a non-homogeneous structure to improve sensing capability. Non-homogenous SiGe nanowires were fabricated by Ge condensation technique. Thermal process was investigated and discussed. In this study, 900℃ annealing for 30 minutes after oxidation led to highest conductance change and sensitivity. Also, we proved that non-homogeneous SiGe nanowire exhibited higher response than homogeneous SiGe nanowire.